CISSOID introduces the second generation HADESTM, a highly integrated isolated gate driver product. HADES? is designed for high density power converters, motor drives and actuator applications based on fast switching silicon carbide (SiC) transistors, conventional power MOSFETs and IGBTs. With the unmatched durability of CISSOID products, the gate driver HADESTM delivers higher reliability and longer life in harsh environments to meet system designers' needs in the aerospace, automotive, industrial, oil and gas markets. .
HADES? includes both hermetic ceramic and plastic packages. The former can be used in extreme temperature applications up to 225 ° C. The latter is suitable for systems with temperatures up to 175 ° C but with a focus on extending service life. .
The HADES® v2 gate driver includes all the functions needed to drive the power switch gate in an isolated high voltage half-bridge. The complete solution is highly integrated and compact, enabling all the advantages of fast switching silicon carbide power transistors.
The chipset uses three integrated circuits: the HADES2P on one main side, the HADES2S on the other side, and the recently introduced four-diode ELARA. Both the primary and secondary side chips are available in ceramic QFP 32-pin or plastic QFP 44-pin packages.
The main-side chip (HADES2P) embeds a 0.8 ohm-80V integrated switch, configurable non-overlapping and undervoltage lockout (UVLO) fault management functions into the current-type flyback controller. It also includes a four-channel isolated signal transceiver (2 Tx and 2 Rx) for PWM and fault signals to be transmitted from the secondary side through a tiny pulse transformer.
The two side-side chips (HADES2S) (one for the high and one for the low) include a 12A driver, UVLO, desaturation and over temperature protection (OTP) fault detection circuitry, and a dual channel isolated signal transceiver.
Also included is an evaluation kit (EVK-HADES2) that shows a half bridge placed on the HADES v2 gate driver and two CISSOID NEPTUNE (10A/1200V SiC Mosfet). The kit includes a demo board with the half bridge and complete documentation. The demo board measures only 60mm x 55mm (2.4" x 2.2"). HADES? v2 is capable of driving higher power and other types of switches, including IGBTs and conventional MOSFETs. It is expected to support driving GaN transistors in the near future.
HADES? v2's thermal durability gives designers the freedom to place gate drivers next to power transistors, minimizing parasitic inductance and enabling fast switching while reducing switching losses. The lower the switching loss, the higher the operating frequency, and the size and weight of the capacitors and magnetic components are also significantly reduced. In addition, the higher the operating temperature, the lower the cooling requirements, and thus the smaller the size and weight of the system.
The HADES® v2 chipset is optimized to minimize the number and size of active and passive components, allowing integration into the Intelligent Power Module (IPM) (when the gate driver is located next to the power switch). The integration of HADES into IPM will further increase the power density of the converter, ensuring long-term reliable operation at high temperatures: very long life (several years) in applications of 100 ~ 175 °C, or extreme temperatures (175 ° C ~ 225 ° C) Running thousands of hours in the application.
Mr. Tony Denayer, CEO of CISSOID, explained: "HADES? v2 is the result of three years of cooperation with system manufacturers and end users from all walks of life who have adopted various power converters: including motors for industrial applications. Drivers, rail-oriented auxiliary converters, aerospace generators or HEV/EV automotive battery chargers. We have gathered feedback from experts involved in the development of the first version of HADESò, the first version dedicated to silicon carbide (SiC) The isolated gate driver solution for fast switching power components was released in 2011.
HADES® v2 is highly integrated, combining the durability of the CISSOID solution over the past 15 years and reflecting the performance, functionality, reliability and cost requirements of system designers. It is not only suitable for harsh environments, but it is also suitable for large-scale, cost-sensitive applications where the ambient temperature does not exceed 100 ° C but the key factors are longevity and maintenance costs.
In summary, HADES® v2 opens the door to true high-density power converters. Many of our customers can't wait to wait for its launch. We are proud to bring this one-of-a-kind breakthrough technology to market. "
The HADES® v2 data sheet is available on the CISSOID website in the following manner: http:// Gate-driver-for-high-density-power-converters-chipset.html. Hermetic ceramic chipsets are available for immediate delivery. The plastic chipset is available for order and samples can be delivered in June 2015. The evaluation kit is on sale (p/n: EVK-TIT2785A-T) for €3,300.
We believe that confidence always comes from the outside.We never let up on the quality of our productsWe use professional storage technology experience to configure this brand new SSD product, using 3D NAND TLC chip, with high-performance SMI (Silicon Motion) master control chip, all efforts to improve the performance of every operation.
m.2 ngff sata 2280, sata for laptop speed ,ssd 128gb 256gb
MICROBITS TECHNOLOGY LIMITED , https://www.hkmicrobits.com