Recently, Plansee successfully developed the metal heat dissipation material R670. Molybdenum is a commonly used metal material, which has good thermal conductivity and heat resistance, but its thermal expansion coefficient is lower than that of sapphire (Al2O3) (about 5). The newly developed molybdenum-copper composite Mo-Cu R670 has the same thermal expansion coefficient as sapphire, its thermal conductivity is 170W/mK, and the temperature drift is 6.7ppm/K.
The gallium nitride based semiconductor layer is the most common process for producing blue spectrum chips (including white LEDs) which are grown by epitaxy using MOCVD on a sapphire substrate. In order to dissipate heat, it is necessary to bond a layer of metal on the sapphire substrate for growing the epitaxial layer, but if the sapphire and the metal layer have different coefficients of thermal expansion, the material having a low coefficient of thermal expansion is liable to be broken to affect the growth quality of the epitaxial layer. To prevent such defects, the ideal metal layer should have the same coefficient of thermal expansion as sapphire.
The gallium nitride based semiconductor layer is the most common process for producing blue spectrum chips (including white LEDs) which are grown by epitaxy using MOCVD on a sapphire substrate. In order to dissipate heat, it is necessary to bond a layer of metal on the sapphire substrate for growing the epitaxial layer, but if the sapphire and the metal layer have different coefficients of thermal expansion, the material having a low coefficient of thermal expansion is liable to be broken to affect the growth quality of the epitaxial layer. To prevent such defects, the ideal metal layer should have the same coefficient of thermal expansion as sapphire.
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