FSI International Announces Expansion of ViPR? Total Wet Removal Technology to NAND Memory Manufacturing

Hyundai skhynix NAND 128M H27S1G8F2BFR-B

Minneapolis, USA (March 24, 2009) -- FSI International, Inc. (Nasdaq: FSI I), the world's leading supplier of wafer fabrication, cleaning and surface treatment equipment for semiconductor manufacturing, today announced: A major memory manufacturer extends FSI 's ZETA® cleaning system with unique ViPRTM all-wet ashless cleaning technology to NAND flash production. Many device manufacturers are well aware of the benefits of FSI's ZETA ViPR technology in the self-aligned polycide formation process. The IC manufacturer evaluated this machine's ability to remove all-wet photoresist from ashing-induced damage in advanced NAND manufacturing. The customer affirmed the ashless photoresist stripping method in the manufacturing process and realized the machine capability of replacing the ashing-cleaning two-step process with one-step process. In addition to reducing defects, users benefit from a one-step process that shortens the total plant production cycle.

" NAND technology continues to lead the way in device size reduction," said Don Mitchell, president and CEO of FSI. "The expansion of ZETA ViPR into NAND manufacturing demonstrates the key value-added point of total wet removal in advanced processes - its value will only increase as the device size shrinks. We offer this kind of real to our customers. The differentiation process is effective, enabling shorter cycle times, lower capital expenditures, and lower operating costs.

The increasing recognition of ZETA ViPR technology stems from its ability to effectively remove residual metals after eliminating the ashing process and the self-aligned metal silicide process in most photoresist removal processes. For photoresist removal, in addition to the most extreme implant conditions, the unique chemical reactions achieved by the ZETA ViPR process can be accomplished by wet chemical reaction alone. The application of ViPR technology not only eliminates the time and cost required for ashing, but also eliminates damage and dopant/substrate losses caused by the ashing furnace. For metal removal after the self-aligned metal silicide process, the ZETA ViPR process effectively removes unreacted metal without damaging the self-aligned metal silicide. In particular, by successfully combining with the highly advanced NiPt self-aligned metal silicide process, lower annealing temperatures can be used to reduce junction leakage, thereby increasing the yield of the process.